NCPRE is working on a hybrid modulation scheme for a single-phase transformerless solar inverter based on H6 topology. This inverter uses Gallium-Nitride (GaN) devices to improve the efficiency and power density of the solar inverter. A comparative analysis is conducted on two existing modulation schemes. The impact of GaN devices on leakage current and power loss of the H6 solar inverter is evaluated. Among these existing schemes, one demonstrates a lower leakage current but higher power loss compared to the other. In this context, the proposed modulation scheme has better performance than the first scheme in terms of efficiency while also exhibiting lower leakage current than the second scheme. The operation modes of the proposed modulation scheme are described and analysed in detail. The scheme is validated and verified using simulation studies. Furthermore, the scheme is compared with the existing literature to validate the performance of the inverter. A 3 kW PV inverter with the proposed scheme achieves an efficiency improvement of 0.35 % compared to the first scheme and a leakage reduction of 87.89 % towards the second scheme. The proposed scheme offers 98.85 % efficiency at a rated load operating at 100 kHz switching frequency. This work is done by NCPRE students Akash Gangwar, Nachiketa Deshmukh, and Abhishek Chanekar under the guidance of Prof. Sandeep Anand.
Circuit schematic (left) and performance (right).