In NCPRE, Thin Film Group aimed to fabricate high efficiency Perovskite Solar Cell (PSC) in regular (n-i- p) and inverted (p-i-n) device configurations. We have successfully made the state-of-art solar cells with power conversion efficiency ~20% for p-i-n and ~17% for n-i-p configurations for devices over an active area of 0.18cm 2 . Typically active area for high efficiency numbers are reported for device active area of 0.1 cm 2 or less in PSC community. The photovoltaic parameters are shown in the table below. Next, we plan to make transparent PSCs using top transparent electrode for either kind of device configurations. This will facilitate NCPRE to demonstrate the tandem solar cell structures with Silicon as bottom low bandgap cell.
Device Structure 1. [p-i-n]: ITO/PTAA/MAPI/PCBM/BCP/Ag
Device Structure 2. [n-i-p]: FTO/SnO 2 /MAFAPb(IBr) 3 /Spiro-OMeTAD/MoO 3 /Ag
|Device Structure||Current Density (J SC )||Open-circuit Voltage (V OC )||Fill Facto (%)||Efficiency(%)|